Substrates And Methods Of Forming A Pattern On A Substrate

ABSTRACT

Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

TECHNICAL FIELD

Embodiments disclosed herein pertain to substrates and to methods offorming a pattern on a substrate.

BACKGROUND

Integrated circuits are often formed on a semiconductor substrate suchas a silicon wafer or other semiconductive material. In general, layersof various materials which are semiconductive, conductive, or dielectricare used to form the integrated circuits. By way of examples, thevarious materials are doped, ion implanted, deposited, etched, grown,etc. using various processes. A continuing goal in semiconductorprocessing is to strive to reduce the size of individual electroniccomponents, thereby enabling smaller and denser integrated circuitry.

One type of integrated circuitry comprises memory. Individual memorycells of such circuitry are densely packed within a memory array area,and have conductive lines extending outwardly there-from to connect withcontrol circuitry outside of the memory array area. One type of layoutcomprises a memory array area having word lines extending there-across.One example type of memory which may use such layout is a non-volatilememory known as flash. Flash memory is a type of EEPROM(Electrically-Erasable Programmable Read-Only Memory) that may be erasedand reprogrammed in blocks. Most personal computers have BIOS stored ona flash memory chip. Further, flash continues to find increasing use inconsumer devices such as MP3 players, cell phones, digital cameras, etc.

There is a continuing goal in the fabrication of memory and otherintegrated circuitry to reduce feature sizes, such as the widths of wordlines, to create smaller and denser integrated circuitry. Reducedfeature sizes for integrated circuits are related to the techniques usedto form those features. For example, photolithography is one techniqueused to pattern features of integrated circuits. A concept commonlyreferred to as “pitch” is used to describe the sizes of the features inconjunction with spaces immediately adjacent thereto. Pitch may bedefined as the distance between an identical point in two neighboringfeatures of a repeating pattern, thereby including the maximum width ofthe feature and the space to the next immediately adjacent feature. Dueto factors such as optics and light or radiation wave length,photolithography techniques tend to have a minimum pitch below which aparticular photolithographic technique cannot reliably form features.Thus, minimum pitch of a photolithographic technique is an obstacle tocontinued feature size reduction using photolithography.

Pitch multiplication is one proposed method for extending thecapabilities of photolithographic techniques beyond their minimum pitch.This method forms features narrower than minimum photolithographyresolution by, for example, depositing spacer-forming layers that have alateral thickness that is less than that of the minimum capablephotolithographic feature size. The spacer-forming layer isanisotropically etched to form sub-lithographic features, and then thefeatures which were formed at the minimum photolithographic feature sizemay be etched from the substrate. Using such techniques where pitch isactually halved, the reduction is commonly referred to as pitch“doubling”. More generally, pitch “multiplication” encompasses change inpitch by two or more times, and also of fractional values other thanintegers. Thus, conventionally, “multiplication” of pitch by a certainfactor actually involves reduction of the pitch by that factor.

Photolithographic and other techniques used to pattern an array ofrepeating features may not form those features at the edges of the arraythe same as those formed within a more central region away from thearray edges. This is due to optical or other effects that result in theedge features patterning differently than the more central features.Existing manners for overcoming these drawbacks are to form the edgefeatures to be larger and/or have greater pitch than the more centralregion features. Alternately or additionally, dummy features may beformed at the edge(s) of arrays which either do not resolve intounderlying substrate material or result in the formation of underlyingstructures having no circuit function. Regardless, these example priorart techniques for overcoming this problem undesirably consumehorizontal substrate area which might otherwise be used in thefabrication of operable circuit components.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagrammatic top-plan view of a substrate fragment processedin accordance with an embodiment of the invention.

FIG. 2 is a diagrammatic cross-sectional view of a substrate fragment inprocess in accordance with an embodiment of the invention.

FIG. 3 is a view of the FIG. 2 substrate at a processing step subsequentto that shown by FIG. 2.

FIG. 4 is a view of the FIG. 3 substrate at a processing step subsequentto that shown by FIG. 3.

FIG. 5 is a view of the FIG. 4 substrate at a processing step subsequentto that shown by FIG. 4.

FIG. 6 is a view of the FIG. 5 substrate at a processing step subsequentto that shown by FIG. 5.

FIG. 7 is a view of the FIG. 6 substrate at a processing step subsequentto that shown by FIG. 6.

FIG. 8 is a diagrammatic cross-sectional view of a substrate fragment inprocess in accordance with an embodiment of the invention.

FIG. 9 is a view of the FIG. 7 substrate at a processing step subsequentto that shown by FIG. 7, and is taken through line 9-9 in FIG. 1.

FIG. 10 is a view of the FIG. 9 substrate at a processing stepsubsequent to that shown by FIG. 9.

FIG. 11 is a view of the FIG. 10 substrate at a processing stepsubsequent to that shown by FIG. 10.

FIG. 12 is a diagrammatic cross-sectional view of a substrate fragmentin process in accordance with an embodiment of the invention.

FIG. 13 is a view of the FIG. 12 substrate at a processing stepsubsequent to that shown by FIG. 12.

FIG. 14 is a view of the FIG. 13 substrate at a processing stepsubsequent to that shown by FIG. 13.

FIG. 15 is a view of the FIG. 14 substrate at a processing stepsubsequent to that shown by FIG. 14.

FIG. 16 is a view of the FIG. 15 substrate at a processing stepsubsequent to that shown by FIG. 15.

FIG. 17 is a view of the FIG. 16 substrate at a processing stepsubsequent to that shown by FIG. 16.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

Initial example embodiments of methods of forming a pattern on asubstrate are described with references to FIGS. 1-11. FIG. 1 is atop-down view of a substrate fragment 10 having a portion of a pattern12 formed thereon. Substrate 10 may comprise a substrate upon whichintegrated circuitry is being or has been fabricated, and regardless maycomprise a semiconductor substrate. In the context of this document, theterm “semiconductor substrate” or “semiconductive substrate” is definedto mean any construction comprising semiconductive material, including,but not limited to, bulk semiconductive materials such as asemiconductive wafer (either alone or in assemblies comprising othermaterials thereon), and semiconductive material layers (either alone orin assemblies comprising other materials). The term “substrate” refersto any supporting structure, including, but not limited to, thesemiconductive substrates described above.

Pattern 12 may be characterized by some repeating pattern region 14 anda pattern-interrupting region 16 adjacent thereto (i.e., a region wherethe repeating pattern proximate the edge of region 14 is interrupted orchanges). Repeating pattern region 14 in the depicted example comprisesrepeating features shown in the form of longitudinally-elongated lines18 received over underlying substrate material 22, and which areapproximately/approaching straight and parallel relative to one another(e.g., transistor gate line constructions, for example charge-retaininggate lines of flash memory circuitry or other circuitry). Alternate lineconfigurations and/or non-line features may be formed. In oneembodiment, repeating pattern region 14 comprises a repeating featurepattern that is of constant pitch “P” at least immediately adjacent topattern-interrupting region 16.

Pattern-interrupting region 16 is shown as comprising a single feature21 in the form of a rectangle or longitudinally-elongated line receivedover underlying substrate material 22. Alternately by way of examplesonly, pattern-interrupting region 16 may comprise a single feature ofalternate size and/or shape, or may include multiple features of thesame configuration or of varying configuration(s). For example,pattern-interrupting region 16 may comprise multiple smaller features(not shown) that perhaps include some repeating pattern other than thatassociated with the size and/or shape of the features at the edge ofrepeating pattern region 14. As a specific example, thepattern-interrupting region may comprise one or more raised featureshaving a plurality of contact openings or conductive vias formedthere-through (not shown). In one embodiment, feature 21 is continuousover at least a majority of pattern interrupting region 16. Regardless,the pattern-interrupting region is adjacent to an edge of the repeatingpattern region and may comprise an intermediate pattern-interruptingregion between two otherwise adjacent repeating pattern regions that mayhave the same or different respective repeating patterns.

Referring to FIG. 2, an example predecessor substrate 10 that may beused in ultimately producing the example substrate of FIG. 1 is shown.The FIG. 2 substrate 10 is shown as comprising innermost substratematerial 20 and a hard-masking material 22 there-over. Each may behomogenous or non-homogenous, with an example hard-masking materialbeing spin-on-carbon. An example thickness range for material 22 is fromabout 50 Angstroms to about 500 Angstroms. Outermost portions ofsubstrate material 20, as an example, may comprise a stack ofconductive, semiconductive, and/or dielectric materials for formation oftransistor gates, for example charge-retaining gates of NAND flash orother memory circuitry, or of non-memory circuitry. Alternate substratematerial(s) may be used to fabricate, for example, other circuitry ornon-circuitry components.

An elevationally inner masking material 24 and an elevationally outermasking material 26 are received over underlying substrate material22/20. Materials 24 and 26 may be of the same composition or ofdifferent compositions, and if of different compositions may each behomogenous or non-homogenous. If of the same composition and homogenous,materials 24 and 26 may be indistinguishable from one another, forexample being inner and outer portions of the same material. One or bothof materials 24 and 26 may comprise an antireflective coating. Asspecific anti-reflective examples, outer material 26 may comprisesilicon-rich Si_(x)O_(y)N_(z) and inner material 24 may compriseoxygen-rich Si_(x)O_(y)N_(z), or vice-versa. An example thickness rangefor each of materials 24 and 26 is from about 50 Angstroms to about 500Angstroms.

A masking block 27 has been formed over outer masking material 26 withinpattern-interrupting region 16. In one embodiment, masking block 27comprises photoresist 28, for example which has been patterned into thedepicted shape from a blanketing layer of photoresist. Alternateexisting or yet-to-be developed techniques might be used to form examplemasking block 27.

Referring to FIG. 3, outermost masking material 26 has been patternedusing masking block 27 (not shown) to mask pattern-interrupting region16 (e.g., at least a majority thereof) and to expose repeating patternregion 14, and masking block 27 has been removed.

In one embodiment and for example as shown, FIGS. 2 and 3 show anexample of forming a pattern-interrupting region mask 30 elevationallyover underlying substrate material 24/22/20, with thepattern-interrupting region mask comprising a raised masking feature 29.Raised masking feature 29 may be of the same substantial size and shapeas raised feature 21 in FIG. 1. Further, more than one raised maskingfeature (not shown) may be formed within pattern-interrupting region 16.Other raised masking features (not shown) would likely be formed outsideof the depicted pattern-interrupting region 16 and repeating patternregion 14, for example in formation of other pattern interrupting orother regions or features on the substrate. For example and by way ofexample only, raised masking features of a pattern-interrupting regionmask may be formed at both opposing lateral edges (not shown) and/or atone or both of opposing longitudinal ends (not shown) of individualrepeating pattern regions. Further, the material of thepattern-interrupting region mask may be used elsewhere over thesubstrate to form operative or non-operative circuitry components whereintegrated circuitry is being fabricated.

Referring to FIG. 4, a planarizing film 32 has been formed elevationallyover patterned outermost masking material 26 and over innermost maskingmaterial 24. Planarizing film 32 may be formed by any suitabletechnique, for example deposited as a spin-on-material that inherentlyproduces a generally planar outer surface, or by deposition of aconformal material to a suitable thickness followed by planarizing theconformal material. An example thickness range for planarizing film 32is from about 50 Angstroms to about 2,500 Angstroms. Planarizing film 32may be homogenous or non-homogenous, and regardless may be of the samecomposition or of different composition from that of one or both ofinnermost masking material 24 and outermost masking material 26. Ahard-masking material 34 has been formed over planarizing film 32, andpatterned feature blocks 36 have been formed over hard-masking material34. Feature blocks 36 may, by way of example, comprise photoresisthaving been formed using photolithography. Hard-masking material 34 maybe homogenous or non-homogenous, with an example thickness range beingfrom about 50 Angstroms to about 500 Angstroms. Hard-masking material 34may be of different composition from that of planarizing film 32, andmay provide an anti-reflective function in any photolithographic patternused to form example feature blocks 36.

Referring to FIG. 5, feature blocks 36 (not shown) have been used in apitch-multiplication technique (e.g., pitch doubling) in forming maskingblocks 38. By way of example, the FIG. 5 construction may be formed byinitially laterally trimming the masking blocks 36 in FIG. 4 andthereafter depositing a conformal material having elevational thicknessover the tops of masking blocks 36 and lateral thickness over sidewallsof masking blocks 36 that is substantially equal to the depicted lateralthickness/width of masking features 38. The conformal material may thenbe anisotropically etched to remove it from being received elevationallyover feature blocks 36 and from between those portions of the conformalmaterial received against the sidewalls of feature blocks 36. Featureblocks 36 may thereafter be removed, thereby forming the FIG. 5construction. Masking blocks 38 may, for example, be of the samesubstantial size and shape as lines 18 in FIG. 1.

Referring to FIG. 6, masking features 38 (not shown) have been used as amask to form a repeating feature pattern in hard-masking material 34,and masking blocks 38 have been removed.

Referring to FIG. 7, the hard-masking features of material 34 (notshown) of FIG. 6 have been used as a mask in etching into planarizingfilm 32 to form a repeating pattern of raised masking features 40 thatare elevationally over outermost masking material 26 withinpattern-interrupting region 16 and elevationally over inner maskingmaterial 24 within repeating pattern region 14. Techniques other than orin addition to those described above and depicted with respect to FIGS.4-7 may be used in patterning the planarizing film into the examplerepeating pattern of raised masking features 40. Further alternately, byway of example, processing may occur whereby no planarizing film 32and/or no hard-masking material 34 is used, for example with raisedmasking features 40 being formed directly from one or more materials.Regardless, in one embodiment raised masking features 40 may beconsidered as comprising a repeating pattern region mask 41 that hasbeen formed over pattern-interrupting region mask 30 regardless of howmasks 30 and 41 are formed. Repeating pattern region mask 41 comprisesmultiple raised masking features 40 that are elevationally over raisedmasking feature 29 of pattern-interrupting region mask 30 and multipleraised masking features 40 that are not elevationally over raisedmasking feature 29 of pattern-interrupting region mask 30. In oneembodiment and as shown, multiple raised masking features 40 that areover and not over raised masking feature 29 have respectiveelevationally outermost surfaces 42 that are planar, and in oneembodiment that are co-planar.

The raised masking features 40 that are elevationally over raisedmasking feature 29 in pattern-interrupting region 16 may be consideredas comprising a pair of laterally-outermost raised masking features 40 xand 40 y relative to raised masking feature 29. Further, maskingfeatures 40 x and 40 y may be considered as having laterally outermostedges 43 relative to raised masking feature 29. The depicted FIG. 7construction shows an example wherein raised masking feature 29 does notextend laterally beyond either of laterally outermost edges 43 ofmasking features 40 x and 40 y. Alternately, by way of example, maskingfeature 29 may extend laterally beyond at least one of laterallyoutermost edges 43 of features 40 x or 40 y (not shown in FIG. 7). Whenmasking features 40 x and 40 y laterally extend beyond both outer edgesof masking feature 29, they may do so to the same amount/degree (notshown) or to different amounts/degrees (for example, as shown).

Alternately as another example, masking feature 29 may extend laterallybeyond both of the laterally outermost edges of the pair of laterallyoutermost raised masking features, for example as shown with respect toa substrate fragment 10 a in FIG. 8. Like numerals from theabove-described embodiments have been used where appropriate, with someconstruction differences being indicated with the suffix “a”. In FIG. 8,raised masking feature 29 a within pattern-interrupting region 16extends laterally beyond laterally outermost edges 43 of both oflaterally outermost raised masking features 40 x and 40 y, formingpattern-interrupting region mask 30 a.

In one embodiment, the patterned planarizing film and the patternedouter masking material are used as a mask in forming a pattern (e.g.,FIG. 1 pattern 12) into the inner masking material. In one embodiment,the pattern-interrupting mask and the repeating pattern region mask areused as a combination mask in forming a pattern into underlyingsubstrate material on which the combination mask is received, and forexample regardless of whether a patterned planarizing film, patternedouter masking material, and inner masking material are used. Regardless,forming of the pattern into underlying substrate material in oneembodiment may include etching into such underlying substrate material,for example as shown in the processing going from FIG. 7 to that of FIG.9. In FIG. 9, combination mask 30/41 of FIG. 7 (not shown in FIG. 9) hasbeen used as an etch mask while etching into underlying material24/22/20 thereby forming features 18, and combination mask 30/41 hasbeen removed during or subsequent to such etching. Alternately by way ofexamples, the FIG. 7 combination mask 30/41 might be used as an ionimplantation and/or diffusion doping mask (not shown) in forming adesired pattern into underlying substrate material. Portions of maskingfeatures 40 x and 40 y that may extend slightly beyond laterallyoutermost edges of raised feature 29 may not necessarily resolve ininner masking material 24, as is shown.

FIG. 9 shows underlying substrate material 24/22/20 in accordance withthe above example description as comprising hard-masking material 22.

FIG. 10 shows subsequent example processing in accordance with oneembodiment, wherein the FIG. 9-patterned material 24 has been used toform a pattern in hard-masking material 22, and which has subsequentlybeen used in FIG. 11 to etch into substrate material 20 underlyinghard-masking material 22. Patterned material 24 and hard-maskingmaterial 22 are shown as having been removed in FIG. 10 and in FIG. 11,respectively. Alternately by way of examples only, masking material 22in FIG. 10 may be used as masking to conduct diffusion doping and/or ionimplanting into substrate material 20.

Any one or more of the example FIGS. 9-11 substrates may in top-viewhave the example depicted pattern of FIG. 1. Alternately oradditionally, features of the substrate may be subjected to further sizeand/or shape modification (e.g., laterally trimming of raised features).

Further example embodiments are next described with reference to FIGS.12-17 with respect to a substrate 10 b. Like numerals from theabove-described embodiments have been used where appropriate, with someconstruction differences being indicated with the suffix “b”. Referringto FIG. 12, elevationally inner masking material 24 and elevationallyoutermost masking material 26 have been formed over underlying substratematerial 22/20 analogous to the above-described embodiments. Featureblocks 38 of material 36 have been formed over outermost maskingmaterial 26.

Referring to FIG. 13, feature blocks 38 (not shown) of FIG. 12 have beenused in the patterning of outermost masking material 26 into a repeatingpattern of raised masking features 40 that are elevationally over innermasking material 24 within pattern-interrupting region 16 and withinrepeating pattern region 14. In one embodiment, FIG. 13 may beconsidered as depicting formation of a repeating pattern region mask 41b elevationally over underlying substrate material 24/22/20, and whichcomprises multiple raised masking features 40 within repeating patternregion 14 and multiple raised masking feature 40 withinpattern-interrupting region 16.

Referring to FIG. 14, planarizing film 32 has been formed elevationallyover patterned outermost masking material 26.

Referring to FIG. 15, masking block 27 (e.g., photoresist) has beenformed over planarizing film 32 to mask pattern-interrupting region 16(e.g., at least a majority thereof) and leave repeating pattern region14 exposed.

Referring to FIG. 16, planarizing film 32 has been patterned usingmasking block 27 to mask pattern-interrupting region 16 and leaverepeating pattern region 14 exposed. Masking block 27 may or may not beremoved during and/or after the processing depicted in going from FIG.15 to FIG. 16.

In one embodiment, FIG. 16 depicts the formation of apattern-interrupting region mask 30 b comprising a raised feature 29 bthat is elevationally over a plurality of the multiple raised maskingfeatures 40 of repeating pattern region mask 41 a withinpattern-interrupting region 16, and regardless of whether a planarizingfilm is used. In one embodiment and as shown, pattern interruptingregion mask 30 b comprises at least three different compositionmaterials including that of the plurality of multiple raised featureswithin pattern-interrupting region 16 (e.g., at least materials 26, 32,and that of masking block 27). Alternately in one embodiment, thepattern interrupting mask may be homogenous (not shown) but for theplurality of multiple raised features within the pattern interruptingregion.

In one embodiment, patterned planarizing film 32 and the outermostmasking material 26 are used as a mask in forming the pattern into innermasking material 24. In one embodiment, repeating pattern mask 41 b andthe pattern-interrupting region mask 30 b are used as a combination mask30 b/41 b in forming the pattern into underlying substrate material onwhich the combination mask is received. FIG. 17, for example, depictsexample such embodiments whereby the example pattern has been formedinto underlying/inner masking material 24, and which in the depictedembodiment is of the same construction as that of FIG. 9. Portions ofmasking features 40 that may extend slightly beyond laterally outermostedges of raised feature 29 b may not necessarily resolve in planarizingfilm 32, as is shown.

Embodiments of the invention encompass a method of forming a pattern ona substrate, where the pattern comprises a repeating pattern region anda pattern-interrupting region adjacent to the repeating pattern region.Such a method forms on the substrate a mask comprising the repeatingpattern region and the pattern-interrupting region using two separatemasking steps. The mask is ultimately used in forming the pattern intounderlying substrate material on which the mask is received. All of theembodiments described above are only but example such methods.

In one embodiment, the mask step which forms the repeating patternregion also forms a repeating feature pattern of the repeating patternregion within the pattern interrupting region, and further comprisessubsequently removing the repeating feature pattern from the patterninterrupting region. In one embodiment, the two masking steps formraised masking features that have elevationally outermost surfaces thatare at different substrate elevations in one masking step relative tothe other masking step. Each of the above-described general embodimentswith respect to FIGS. 1-11 and with respect to FIGS. 12-17 are butexample such embodiments (e.g., different example substrate elevations75, 77 and 75 b, 77 b being shown in FIG. 7 and FIG. 16, respectively).In the embodiments described with respect to FIGS. 1-11, substrateelevation 75 within the pattern interrupting region is everywhereelevationally inward of substrate elevation 77 within the repeatingpattern region. In the embodiments of FIGS. 12-17, substrate elevation75 b within the pattern interrupting region is everywhere elevationallyoutward of substrate elevation 77 b within the repeating pattern region.

In one embodiment, the masking step used in forming the repeatingpattern region of the mask comprises pitch multiplication. In oneembodiment each masking step comprises photolithography. In oneembodiment, the masking step used in forming the repeating patternregion of the mask comprises pitch multiplication and the masking stepused in forming the pattern interrupting region of the mask does notcomprise pitch multiplication.

In one embodiment, the method is void of forming any of dummy featuresand relaxed pitch features in the mask between the repeating patternregion and the pattern-interrupting region.

Embodiments of the invention encompass substrates independent of methodof use or manufacture. In one embodiment, a substrate comprises arepeating pattern region and a pattern-interrupting region adjacent tothe repeating pattern region. A pattern-interrupting region mask iselevationally over underlying substrate material. Thepattern-interrupting region mask comprises a raised masking feature. Arepeating pattern region mask is elevationally over thepattern-interrupting region mask. The repeating pattern region maskcomprises multiple raised masking features that are elevationally overthe raised masking feature of the pattern-interrupting region mask andmultiple raised masking features that are not elevationally over theraised masking feature of the pattern-interrupting region mask. Otherconstruction features as identified above may be part of the substrate.

In one embodiment, a substrate comprises a repeating pattern region anda pattern-interrupting region adjacent to the repeating pattern region.A repeating pattern region mask is elevationally over underlyingsubstrate material. The repeating pattern region mask comprises multipleraised masking features within the repeating pattern region and multipleraised masking features within the pattern-interrupting region. Apattern-interrupting region mask is elevationally over the repeatingpattern region mask. The pattern-interrupting region mask comprising araised masking feature that is elevationally over a plurality of themultiple raised masking features of the repeating pattern region maskwithin the pattern-interrupting region. Other construction features asidentified above may be part of the substrate.

CONCLUSION

In some embodiments, a method of forming a pattern on a substrate, wherethe pattern comprises a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprises forming on the substrate a mask comprising the repeatingpattern region and the pattern-interrupting region using two separatemasking steps. The mask is used in forming the pattern into underlyingsubstrate material on which the mask is received.

In some embodiments, a method of forming a pattern on a substrate, wherethe pattern comprises a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprises forming a pattern-interrupting region mask elevationally overunderlying substrate material. The pattern-interrupting region maskcomprises a raised masking feature. A repeating pattern region mask isformed elevationally over the pattern-interrupting region mask. Therepeating pattern region mask comprises multiple raised masking featuresthat are elevationally over the raised masking feature of thepattern-interrupting region mask and multiple raised masking featuresthat are not elevationally over the raised masking feature of thepattern-interrupting region mask. The pattern-interrupting region maskand the repeating pattern region mask are used as a combination mask informing the pattern into the underlying substrate material on which thecombination mask is received.

In some embodiments, a method of forming a pattern on a substrate, wherethe pattern comprises a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprises forming a repeating pattern region mask elevationally overunderlying substrate material. The repeating pattern region maskcomprises multiple raised masking features within the repeating patternregion and multiple raised masking features within thepattern-interrupting region. A pattern-interrupting region mask isformed elevationally over the repeating pattern region mask. Thepattern-interrupting region mask comprises a raised masking feature thatis elevationally over a plurality of the multiple raised maskingfeatures of the repeating pattern region mask within thepattern-interrupting region. The repeating pattern mask and thepattern-interrupting region mask are used as a combination mask informing the pattern into the underlying substrate material on which thecombination mask is received.

In some embodiments, a method of forming a pattern on a substrate, wherethe pattern comprises a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprises forming elevationally inner and elevationally outer maskingmaterial elevationally over underlying substrate material. The outermasking material is patterned to mask the pattern-interrupting regionand expose the repeating pattern region. A planarizing film is formedelevationally over the patterned outer masking material and over theinner masking material. The planarizing film is patterned into arepeating pattern of raised masking features that are elevationally overthe patterned outer masking material within the pattern-interruptingregion and elevationally over the inner masking material within therepeating pattern region. The patterned planarizing film and thepatterned outer masking material are used as a mask in forming thepattern into the inner masking material.

In some embodiments, a method of forming a pattern on a substrate, wherethe pattern comprises a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprises forming elevationally inner and elevationally outer maskingmaterial elevationally over underlying substrate material. The outermasking material is patterned into a repeating pattern of raised maskingfeatures that are elevationally over the inner masking material withinthe pattern-interrupting region and the repeating pattern region. Aplanarizing film is formed elevationally over the patterned outermasking material. The planarizing film is patterned to mask thepattern-interrupting region and leave the repeating pattern regionexposed. The patterned planarizing film and the patterned outer maskingmaterial are used as a mask in forming the pattern into the innermasking material.

In some embodiments, a substrate comprises a repeating pattern regionand a pattern-interrupting region adjacent to the repeating patternregion. A pattern-interrupting region mask is elevationally overunderlying substrate material. The pattern-interrupting region maskcomprises a raised masking feature. A repeating pattern region mask iselevationally over the pattern-interrupting region mask. The repeatingpattern region mask comprises multiple raised masking features that areelevationally over the raised masking feature of thepattern-interrupting region mask and multiple raised masking featuresthat are not elevationally over the raised masking feature of thepattern-interrupting region mask.

In some embodiments, a substrate comprises a repeating pattern regionand a pattern-interrupting region adjacent to the repeating patternregion. A repeating pattern region mask is elevationally over underlyingsubstrate material. The repeating pattern region mask comprises multipleraised masking features within the repeating pattern region and multipleraised masking features within the pattern-interrupting region. Apattern-interrupting region mask is elevationally over the repeatingpattern region mask. The pattern-interrupting region mask comprising araised masking feature that is elevationally over a plurality of themultiple raised masking features of the repeating pattern region maskwithin the pattern-interrupting region.

In compliance with the statute, the subject matter disclosed herein hasbeen described in language more or less specific as to structural andmethodical features. It is to be understood, however, that the claimsare not limited to the specific features shown and described, since themeans herein disclosed comprise example embodiments. The claims are thusto be afforded full scope as literally worded, and to be appropriatelyinterpreted in accordance with the doctrine of equivalents.

1. A method of forming a pattern on a substrate, the pattern comprisinga repeating pattern region and a pattern-interrupting region adjacent tothe repeating pattern region, comprising: forming on the substrate amask comprising the repeating pattern region and thepattern-interrupting region using two separate masking steps; and usingthe mask in forming the pattern into underlying substrate material onwhich the mask is received.
 2. The method of claim 1 wherein the maskstep which forms the repeating pattern region also forms a repeatingfeature pattern of the repeating pattern region within thepattern-interrupting region, and further comprising subsequentlyremoving the repeating feature pattern from the pattern-interruptingregion.
 3. The method of claim 1 wherein the two masking steps formraised masking features that have elevationally outermost surfaces thatare at different substrate elevations in one masking step relative tothe other masking step.
 4. The method of claim 3 wherein substrateelevation within the pattern-interrupting region is everywhereelevationally inward of substrate elevation within the repeating patternregion.
 5. The method of claim 3 wherein substrate elevation within thepattern-interrupting region is everywhere elevationally outward ofsubstrate elevation within the repeating pattern region.
 6. The methodof claim 1 wherein forming the pattern into underlying substratematerial comprises etching into the underlying substrate material usingthe mask.
 7. The method of claim 1 wherein the masking step used informing the repeating pattern region of the mask comprises pitchmultiplication.
 8. The method of claim 1 wherein each masking stepcomprises photolithography.
 9. The method of claim wherein the maskingstep used in forming the repeating pattern region of the mask comprisespitch multiplication and the masking step used in forming thepattern-interrupting region of the mask does not comprise pitchmultiplication.
 10. The method of claim 1 being void of forming any ofdummy features and relaxed pitch features in the mask between therepeating pattern region and the pattern-interrupting region.
 11. Themethod of claim 1 wherein the repeating pattern region comprises arepeating feature pattern that is of constant pitch at least immediatelyadjacent to the pattern-interrupting region.
 12. A method of forming apattern on a substrate, the pattern comprising a repeating patternregion and a pattern-interrupting region adjacent to the repeatingpattern region, comprising: forming a pattern-interrupting region maskelevationally over underlying substrate material, thepattern-interrupting region mask comprising a raised masking feature;forming a repeating pattern region mask elevationally over thepattern-interrupting region mask, the repeating pattern region maskcomprising multiple raised masking features that are elevationally overthe raised masking feature of the pattern-interrupting region mask andmultiple raised masking features that are not elevationally over theraised masking feature of the pattern-interrupting region mask; andusing the pattern-interrupting region mask and the repeating patternregion mask as a combination mask in forming the pattern into theunderlying substrate material on which the combination mask is received.13. The method of claim 12 wherein the multiple raised masking featuresthat are elevationally over the raised masking feature in thepattern-interrupting region comprise a pair of laterally-outermostraised masking features relative to the raised masking feature in thepattern-interrupting region, the raised masking feature in thepattern-interrupting region extending laterally beyond thelaterally-outermost edges of the pair of laterally-outermost raisedmasking features.
 14. The method of claim 12 wherein the multiple raisedmasking features that are elevationally over the raised masking featurein the pattern-interrupting region comprise a pair oflaterally-outermost raised masking features relative to the raisedmasking feature in the pattern-interrupting region, the raised maskingfeature in the pattern-interrupting region not extending laterallybeyond at least one of the laterally-outermost edges of the pair oflaterally-outermost raised masking features.
 15. The method of claim 14wherein the raised masking feature in the pattern-interrupting regiondoes not extend laterally beyond both of the laterally-outermost edgesof the pair of laterally-outermost raised masking features.
 16. Themethod of claim 12 wherein forming the pattern into the underlyingsubstrate material comprises etching into the underlying substratematerial.
 17. The method of claim 16 wherein the underlying substratematerial comprises hard-masking material, and further comprising usingthe hard-masking material as an etch mask while etching into substratematerial underlying the hard-masking material.
 18. The method of claim12 wherein the multiple raised masking features that are over and notover the raised masking feature have respective elevationally outermostsurfaces that are planar.
 19. The method of claim 18 wherein the planaroutermost surfaces are coplanar.
 20. A method of forming a pattern on asubstrate, the pattern comprising a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprising: forming a repeating pattern region mask elevationally overunderlying substrate material, the repeating pattern region maskcomprising multiple raised masking features within the repeating patternregion and multiple raised masking features within thepattern-interrupting region; forming a pattern-interrupting region maskelevationally over the repeating pattern region mask, thepattern-interrupting region mask comprising a raised masking featurethat is elevationally over a plurality of the multiple raised maskingfeatures of the repeating pattern region mask within thepattern-interrupting region; and using the repeating pattern mask andthe pattern-interrupting region mask as a combination mask in formingthe pattern into the underlying substrate material on which thecombination mask is received.
 21. The method of claim 20 wherein thepattern-interrupting mask comprises at least three different compositionmaterials including that of the plurality of multiple raised featureswithin the pattern-interrupting region.
 22. The method of claim 20wherein the pattern-interrupting mask is homogenous but for theplurality of multiple raised features within the pattern-interruptingregion.
 23. A method of forming a pattern on a substrate, the patterncomprising a repeating pattern region and a pattern-interrupting regionadjacent to the repeating pattern region, comprising: formingelevationally inner and elevationally outer masking materialelevationally over underlying substrate material; patterning the outermasking material to mask the pattern-interrupting region and expose therepeating pattern region; forming a planarizing film elevationally overthe patterned outer masking material and over the inner maskingmaterial; patterning the planarizing film into a repeating pattern ofraised masking features that are elevationally over the patterned outermasking material within the pattern-interrupting region andelevationally over the inner masking material within the repeatingpattern region; and using the patterned planarizing film and thepatterned outer masking material as a mask in forming the pattern intothe inner masking material.
 24. The method of claim 23 wherein theplanarizing film is of different composition from that of the innermasking material.
 25. The method of claim 23 wherein the inner and outermasking materials are of different compositions.
 26. The method of claim25 wherein the planarizing film is of different composition from thoseof the inner and outer masking materials.
 27. The method of claim 23wherein the outer masking material comprises an anti-reflective coating.28. The method of claim 27 wherein the inner masking material comprisesan anti-reflective coating of different composition from that of theouter masking material.
 29. The method of claim 23 wherein forming thepattern into the inner masking material comprises etching into the innermasking material, and further comprising using the inner maskingmaterial that has been etched into as an etch mask while etching intothe underlying substrate material.
 30. A method of forming a pattern ona substrate, the pattern comprising a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprising: forming elevationally inner and elevationally outer maskingmaterial elevationally over underlying substrate material; patterningthe outer masking material into a repeating pattern of raised maskingfeatures that are elevationally over the inner masking material withinthe pattern-interrupting region and the repeating pattern region;forming a planarizing film elevationally over the patterned outermasking material; patterning the planarizing film to mask thepattern-interrupting region and leave the repeating pattern regionexposed; and using the patterned planarizing film and the patternedouter masking material as a mask in forming the pattern into the innermasking material.
 31. The method of claim 30 wherein the inner and outermasking materials comprise different composition anti-reflectivecoatings.
 32. The method of claim 31 the outer anti-reflective coatingcomprises silicon-rich Si_(x)O_(y)N_(z) and the inner anti-reflectivecoating comprises oxygen-rich Si_(x)O_(y)N_(z).
 33. A substratecomprising a repeating pattern region and a pattern-interrupting regionadjacent to the repeating pattern region, comprising: apattern-interrupting region mask elevationally over underlying substratematerial, the pattern-interrupting region mask comprising a raisedmasking feature; and a repeating pattern region mask elevationally overthe pattern-interrupting region mask, the repeating pattern region maskcomprising multiple raised masking features that are elevationally overthe raised masking feature of the pattern-interrupting region mask andmultiple raised masking features that are not elevationally over theraised masking feature of the pattern-interrupting region mask. 34-40.(canceled)
 41. A substrate comprising a repeating pattern region and apattern-interrupting region adjacent to the repeating pattern region,comprising: a repeating pattern region mask elevationally overunderlying substrate material, the repeating pattern region maskcomprising multiple raised masking features within the repeating patternregion and multiple raised masking features within thepattern-interrupting region; and a pattern-interrupting region maskelevationally over the repeating pattern region mask, thepattern-interrupting region mask comprising a raised masking featurethat is elevationally over a plurality of the multiple raised maskingfeatures of the repeating pattern region mask within thepattern-interrupting region. 42-45. (canceled)